{"id":1771,"date":"2018-05-02T10:40:44","date_gmt":"2018-05-02T10:40:44","guid":{"rendered":"https:\/\/www.tina.com\/resources\/?page_id=1771"},"modified":"2018-06-21T09:23:11","modified_gmt":"2018-06-21T09:23:11","slug":"1-advantages-and-disadvantages-of-fets","status":"publish","type":"page","link":"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/1-advantages-and-disadvantages-of-fets\/","title":{"rendered":"1. Advantages and disadvantages of\u00a0 FETs"},"content":{"rendered":"<div class=\"top-navigation\">\n<div class=\"current-page\"><img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/people-location-30.png\" \/>CURRENT &#8211; 1. Advantages and disadvantages of\u00a0 FETs<\/div>\n<div class=\"previous-page\"><a href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/\"><img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/leftarrow5.png\" \/>PREVIOUS- Field-effect Transistor Amplifiers: Introduction<\/a><\/div>\n<div class=\"next-page\"><a style=\"font-size: 20px;\" href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/2-metal-oxide-semiconductor-fet-mosfet\/\">NEXT- 2. Metal-oxide semiconductor FET (MOSFET)<img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/rightarrow5.png\" \/><\/a><\/div>\n<div class=\"clear\"><\/div>\n<\/div>\n<h6><script>\nfunction setStyle(){ \nheight = document.getElementsByClassName('entry-header')[0].clientHeight;\ndocument.getElementsByClassName('entry-header')[0].style.marginTop = height +\"px\";\ndocument.getElementsByClassName('top-navigation')[0].style.top = Math.round(-(height-20)*2) +\"px\";\n}\nsetStyle();\nwindow.onresize = function(event) {\nsetStyle();\n};\n<\/script><br \/>\n<strong><em>The advantages of FETs relative to BJTs are summarized as follows:<\/em><\/strong><\/h6>\n<ol>\n<li>FETs are voltage-sensitive devices with high input impedance (on the order of 10<sup>7<\/sup> to 10<sup>12<\/sup> \u03a9). Since this input impedance is considerably higher than that of BJTs, FETs are preferred over BJTs for use as the input stage to a multistage amplifier.<\/li>\n<li>One class of FETs (JFETs) generates lower noise than BJTs.<\/li>\n<li>FETs are more temperature stable than BJTs.<\/li>\n<li>FETs are generally easier to fabricate than BJTs. Greater numbers of devices can be fabricated on a single chip (i.e., increased<em> packing density <\/em>is possible).<\/li>\n<li>FETs react like voltage-controlled variable resistors for small values of drain-to-source voltage.<\/li>\n<li>The high input impedance of FETs permit them to store charge long enough to allow them to be used as storage elements.<\/li>\n<li>Power FETs can dissipate high power and can switch large currents.<\/li>\n<li>FETs are not as sensitive to radiation as BJTs (an important consideration for space electronic applications).<\/li>\n<\/ol>\n<h6><em><strong>There are several disadvantages that limit the use of FETs in some applications.\u00a0<\/strong><\/em><em><strong>These are:<\/strong><\/em><\/h6>\n<ol>\n<li>FETs amplifiers usually exhibit poor frequency response because of high input capacitance.<\/li>\n<li>Some types of FETs exhibit poor linearity.<\/li>\n<li>FETs can be damaged in handling due to static electricity.<\/li>\n<\/ol>\n<div class=\"previous-page\"><a href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/\"><img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/leftarrow5.png\" \/>PREVIOUS- Field-effect transistor amplifiers: Introduction<\/a><\/div>\n<div class=\"next-page\"><a style=\"font-size: 20px;\" href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/2-metal-oxide-semiconductor-fet-mosfet\/\">NEXT- 2. Metal-oxide semiconductor FET (MOSFET)<img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/rightarrow5.png\" \/><\/a><\/div>\n<div class=\"clear\"><\/div>\n","protected":false},"excerpt":{"rendered":"<p>CURRENT &#8211; 1. Advantages and disadvantages of\u00a0 FETs PREVIOUS- Field-effect Transistor Amplifiers: Introduction NEXT- 2. Metal-oxide semiconductor FET (MOSFET) The advantages of FETs relative to BJTs are summarized as follows: FETs are voltage-sensitive devices with high input impedance (on the order of 107 to 1012 \u03a9). Since this input impedance is considerably higher than that [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":1764,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"yst_prominent_words":[51,49,47,19,43,38,53,46,44,48,41,37,54,45,39,36,50,40,52,42],"class_list":["post-1771","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/pages\/1771","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/comments?post=1771"}],"version-history":[{"count":33,"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/pages\/1771\/revisions"}],"predecessor-version":[{"id":3317,"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/pages\/1771\/revisions\/3317"}],"up":[{"embeddable":true,"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/pages\/1764"}],"wp:attachment":[{"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/media?parent=1771"}],"wp:term":[{"taxonomy":"yst_prominent_words","embeddable":true,"href":"https:\/\/www.tina.com\/resources\/wp-json\/wp\/v2\/yst_prominent_words?post=1771"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}