{"id":1940,"date":"2018-05-04T08:18:56","date_gmt":"2018-05-04T08:18:56","guid":{"rendered":"https:\/\/www.tina.com\/resources\/?page_id=1940"},"modified":"2018-06-22T08:50:24","modified_gmt":"2018-06-22T08:50:24","slug":"4-fet-amplifier-configurations-and-biasing","status":"publish","type":"page","link":"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/4-fet-amplifier-configurations-and-biasing\/","title":{"rendered":"4. FET Amplifier Configurations and Biasing"},"content":{"rendered":"<div class=\"top-navigation\">\n<div class=\"current-page\"><img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/people-location-30.png\" \/>CURRENT &#8211; 4. FET Amplifier Configurations and Biasing<\/div>\n<div class=\"previous-page\"><a href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/3-large-signal-equivalent-circuit\/\"><img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/leftarrow5.png\" \/>PREVIOUS- 3. Junction Field-effect Transistor (JFET)<\/a><\/div>\n<div class=\"next-page\"><a style=\"font-size: 20px;\" href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/5-mosfet-integrated-circuits\/\">NEXT- 5. MOSFET Integrated circuits<img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/rightarrow5.png\" \/><\/a><\/div>\n<div class=\"clear\"><\/div>\n<\/div>\n<p><script>\nfunction setStyle(){ \nheight = document.getElementsByClassName('entry-header')[0].clientHeight;\ndocument.getElementsByClassName('entry-header')[0].style.marginTop = height +\"px\";\ndocument.getElementsByClassName('top-navigation')[0].style.top = Math.round(-(height-20)*2) +\"px\";}\nsetStyle();\nwindow.onresize = function(event) {\nsetStyle();\n};\n<\/script><\/p>\n<p align=\"justify\"><strong><em><span style=\"font-size: 22px;\">FET Amplifier Configurations and Biasing<\/span><\/em><\/strong><\/p>\n<p>The approaches that are used for biasing of BJTs can also be used for biasing MOSFETS. We can separate the approaches into those used for discrete component versus integrated circuit amplifiers. Discrete component designs use the large coupling and bypass capacitors to isolate the dc bias for each amplifier stage, much like the discrete component BJT amplifiers. IC MOSFET amplifiers are generally direct coupled because large capacitors are not practical. The IC MOSFET amplifiers are usually biased using dc current sources that are analogous to those used for the BJT IC amplifiers.<\/p>\n<h6><em><span style=\"color: #000000; font-family: Bodoni MT,serif;\"><b><span lang=\"en-US\">4.1 Discrete-Component MOSFET Biasing<\/span><\/b><\/span><\/em><\/h6>\n<p>Discrete-component biasing for MOSFET amplifiers is accomplished with the circuits shown in Figure 21. The gate-to-source voltage determines the type of circuit which may be required for that transistor configuration. For an enhancement mode transistor, there will always be a need for a positive voltage at the gate. In the voltage division biasing, there will be an <em>R<sub>1<\/sub><\/em> and <em>R<sub>2<\/sub><\/em> in order to obtain the positive voltage. For depletion MOSFETs or JFETs, <em>R<sub>2<\/sub><\/em> can either be finite or infinite, as shown in Figure 21(b).<\/p>\n<div id=\"attachment_1950\" style=\"width: 387px\" class=\"wp-caption alignnone\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-1950\" class=\"wp-image-1950 size-full\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersFigure6-21.png\" alt=\"FET Amplifier Configurations and Biasing\" width=\"377\" height=\"219\" srcset=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersFigure6-21.png 377w, https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersFigure6-21-300x174.png 300w\" sizes=\"auto, (max-width: 377px) 100vw, 377px\" \/><p id=\"caption-attachment-1950\" class=\"wp-caption-text\">Figure 21 &#8211; Amplifier biasing configurations<\/p><\/div>\n<p><strong>Common Source (CS)<\/strong>&#8211; the <em>ac<\/em> input is applied at <em>C<sub>G<\/sub><\/em>, the <em>ac<\/em> output is taken at <em>C<sub>D<\/sub><\/em>, and <em>C<sub>S<\/sub><\/em> is connected to a <em>dc<\/em> voltage source or ground. This is analogous to the common-emitter configuration for the BJT.<br \/>\n&#8211;<strong>Source Resistor (SR)<\/strong> &#8211; the <em>ac<\/em> input is applied at <em>C<sub>G<\/sub><\/em>, the <em>ac<\/em> output is taken at <em>C<sub>D<\/sub><\/em> and <em>C<sub>S<\/sub><\/em> is omitted. This is analogous to the emitter-resistor configuration for the BJT.<br \/>\n&#8211;<strong>Common Gate (CG)<\/strong> &#8211; the <em>ac<\/em> input is applied at <em>C<sub>S<\/sub><\/em>, the <em>ac<\/em> output is taken at <em>C<sub>D<\/sub><\/em> and <em>C<sub>G<\/sub><\/em> is connected to a <em>dc<\/em> voltage source or ground. Sometimes in the CG configuration, <em>C<sub>G<\/sub><\/em> is omitted and the gate is connected directly to a <em>dc<\/em> voltage supply. The CG is analogous to the common base configuration for the BJT, although it is seldom seen in circuits.<br \/>\n&#8211;<strong>Source Follower (SF)<\/strong> &#8211; the <em>ac<\/em> input is applied at <em>C<sub>G<\/sub><\/em>, the <em>ac<\/em> output is taken at <em>C<sub>S<\/sub><\/em> and the drain is either connected to a <em>dc<\/em> voltage supply directly or via <em>C<sub>D<\/sub><\/em>. This is sometimes called common drain (CD) and is analogous to the emitter follower configuration for the BJT.<\/p>\n<div id=\"attachment_1954\" style=\"width: 332px\" class=\"wp-caption alignnone\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-1954\" class=\"wp-image-1954 size-full\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersFigure6-22-1.png\" alt=\"Thevenin equivalent circuit\" width=\"322\" height=\"203\" srcset=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersFigure6-22-1.png 322w, https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersFigure6-22-1-300x189.png 300w\" sizes=\"auto, (max-width: 322px) 100vw, 322px\" \/><p id=\"caption-attachment-1954\" class=\"wp-caption-text\">Figure 22 \u2013 Thevenin equivalent circuit<\/p><\/div>\n<p>Each of these configurations is studied in more detail in Section 9, &#8220;FET Amplifier analysis&#8221;.<\/p>\n<p>Since the different configurations only vary in their connections via the capacitors, and the capacitors are open circuits to <em>dc<\/em> voltages and currents, we can study the <em>dc<\/em> bias for the general case. For amplifier design, we want the transistor to operate in the active operating region (also identified as the saturation region or pinch-off mode), so we assume the pinch-off I-V characteristic for the device. (We should always verify this assumption at the end of the design!)<\/p>\n<p>To simplify the bias analysis, we use a Thevenin source to model the circuit at the gate of the transistor as shown in Figure 22.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-1957 size-full\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-24.png\" alt=\"\" width=\"138\" height=\"113\" \/><br \/>\n(24)<\/p>\n<p>Since there are three unknown variables to set for biasing (<em>I<sub>D<\/sub><\/em>, <em>V<sub>GS<\/sub><\/em>, and <em>V<sub>DS<\/sub><\/em>), we need three <em>dc<\/em> equations. First, the <em>dc<\/em> equation around the gate-source loop is written.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-full wp-image-1962\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-25.png\" alt=\"\" width=\"119\" height=\"24\" \/><br \/>\n(25)<\/p>\n<p>Notice that since the gate current is zero, a zero voltage drop exists across <em>R<sub>G<\/sub><\/em>. A second <em>dc<\/em> equation is found from the Kirchhoff&#8217;s law equation in the drain-source loop.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-full wp-image-1964\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-26.png\" alt=\"\" width=\"160\" height=\"25\" \/><br \/>\n(26)<\/p>\n<p>The third <em>dc<\/em> equation necessary to establish the bias point is found from Equation (20) <img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-full wp-image-1924\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-20.png\" alt=\"\" width=\"172\" height=\"52\" \/>\u00a0in section &#8221;\u00a0Junction field-effect transistor (JFET)<strong>&#8221;\u00a0<\/strong>which is repeated here.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-1965\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-27-300x112.png\" alt=\"\" width=\"300\" height=\"112\" srcset=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-27-300x112.png 300w, https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-27.png 368w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><br \/>\n(27)<\/p>\n<p>The first approximation applies if |<em>\u03bbV<sub>DS<\/sub><\/em>| &lt;&lt; 1 (which is nearly always true) and simplifies the solution of the coupled equations considerably.<\/p>\n<p>We can put the equation for <em>g<sub>m\u00a0<\/sub><\/em>[Equation (22)]<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-1929 alignnone\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-22.png\" alt=\"\" width=\"242\" height=\"136\" \/><\/p>\n<p>(22)<\/p>\n<p>into a similar format that will prove useful in design.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-1968\" src=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-28-300x75.png\" alt=\"\" width=\"300\" height=\"75\" srcset=\"https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-28-300x75.png 300w, https:\/\/www.tina.com\/resources\/wp-content\/uploads\/2018\/05\/Field-effectTransistorAmplifiersEq6-28.png 366w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><br \/>\n(28)<\/p>\n<p>&nbsp;<\/p>\n<p>Equations (25)-(28) are sufficient to establish the bias. For discrete MOSFET amplifiers, we do not need to put the Q-point in the center of the <em>ac<\/em> load line as we often did for BJT biasing. This is because discrete FET amplifiers are normally used as the first stage in an amplifier chain to take advantage of the high input resistance. When used as a first stage or <em>preamplifier<\/em>, the voltage levels are so small that we do not drive the output of the preamplifier over large excursions.<\/p>\n<div class=\"previous-page\"><a href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/3-large-signal-equivalent-circuit\/\"><img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/leftarrow5.png\" \/>PREVIOUS- 3. Junction field-effect transistor (JFET)<\/a><\/div>\n<div class=\"next-page\"><a style=\"font-size: 20px;\" href=\"https:\/\/www.tina.com\/resources\/home\/field-effect-transistor-amplifiers-2\/5-mosfet-integrated-circuits\/\">NEXT- 5. MOSFET Integrated circuits<img decoding=\"async\" src=\"https:\/\/www.tina.com\/images\/resource\/rightarrow5.png\" \/><\/a><\/div>\n<div class=\"clear\"><\/div>\n","protected":false},"excerpt":{"rendered":"<p>CURRENT &#8211; 4. FET Amplifier Configurations and Biasing PREVIOUS- 3. Junction Field-effect Transistor (JFET) NEXT- 5. MOSFET Integrated circuits FET Amplifier Configurations and Biasing The approaches that are used for biasing of BJTs can also be used for biasing MOSFETS. We can separate the approaches into those used for discrete component versus integrated circuit amplifiers. 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